DE150-102N02A rf power mosfet v dss = 1000 v i d25 = 2 a r ds(on) = 7.8 ? p dc = 200w symbol test conditions maximum ratings v dss t j = 25c to 150c 1000 v v dgr t j = 25c to 150c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25c 2 a i dm t c = 25c, pulse width limited by t jm 12 a i ar t c = 25c 1.5 a e ar t c = 25c 6 mj dv/dt i s i dm , di/dt ? 100a/ s, v dd v dss , t j 150c, r g = 0.2 ? 3 v/ns i s = 0 >200 v/ns p dc 200 w p dhs t c = 25c derate .7w/c above 25c 105 w p damb t c = 25c 3.5 w r thjc 0.71 c/w r thjhs 1.41 c/w symbol test conditions characteristic values t j = 25c unless otherwise specified min. typ. max. v dss v gs = 0 v, i d = 3 ma 1000 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25c v gs = 0 t j = 125c 50 500 a a r ds(on) v gs = 15 v, i d = 0.5i d25 pulse test, t 300 s, duty cycle d 2% 7.8 ? g fs v ds = 15 v, i d = 0.5i d25 , pulse test 0.8 2 s t j -55 +175 c t jm 175 c t stg -55 +175 c t l 1.6mm (0.063 in) from case for 10 s 300 c weight 2 g features ? isolated substrate ? high isolation voltage (>2500v) ? excellent thermal transfer ? increased temperature and power cycling capability ? ixys advanced low q g process ? low gate charge and capacitances ? easier to drive ? faster switching ? low r ds(on) ? very low insertion inductance (<2nh) ? no beryllium oxide (beo) or other hazardous materials advantages ? optimized for rf and high speed switching at frequencies to 30mhz ? easy to mount?no insulators needed ? high power density n-channel enhancement mode low q g and r g high dv/dt nanosecond switching drain sg1 sg2 gate sd1 sd2
DE150-102N02A rf power mosfet symbol test conditions characteristic values ( t j = 25c unless otherwise specified) min. typ. max. r g 5 ? c iss 500 pf c oss v gs = 0 v, v ds = 0.8 v dss(max) , f = 1 mhz 150 pf c rss 3 pf c stray back metal to any pin 16 pf t d(on) 4 ns t on v gs = 15 v, v ds = 0.8 v dss i d = 0.5 i dm r g = 0.2 ? (external) 4 ns t d(off) 4 ns t off 4 ns q g(on) 23 nc q gs v gs = 10 v, v ds = 0.5 v dss i d = 0.5 i d25 4.5 nc q gd 14 nc source-drain diode characteristic values ( t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 1.5 a i sm repetitive; pulse width limited by t jm 12 a v sd i f = i s , v gs = 0 v, pulse test, t 300 s, duty cycle 2% 1.8 v t rr 710 ns ixys rf reserves the right to change limits, test conditi ons and dimensions. ixys rf mosfets are covered by one or more of the following u.s. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 for detailed device mounting and installation instructions, see the ? de- series mosfet mounting instructions ? technical note on ixys rf?s web site at www.ixysrf.com/technical_support/app_notes.html
DE150-102N02A rf power mosfet 1 10 100 1000 10000 0 100 200 300 400 500 600 700 800 900 1000 vds in volts capacitance in pf cis s cos s cr s s capacitances vs vds
DE150-102N02A rf power mosfet an ixys company 2401 research blvd., suite 108 fort collins, co usa 80526 970-493-1901 fax: 970-493-1903 email: deiinfo@directedenergy.com web: http://www.directedenergy.com 102n02a de-series spice model the de-series spice model is illustrat ed in figure 1. the model is an expan- sion of the spice level 3 mosfet model. it includes the stray inductive terms l g , l s and l d . rd is the r ds(on) of the device, rds is the resistive leakage term. the output capacitance, c oss , and reverse transfer capacitance, c rss are mod- eled with reversed biased diodes. this provides a varactor type response nec- essary for a high power device model. the turn on delay and the turn off delay are adjusted via ron and roff. figure 1 de-series spice model this spice model may be downloaded as a text file from the dei web site at www.directedenergy.com/spice.htm net list: *sym=powmosn .subckt 102n02a 10 20 30 * terminals: d g s * 1000 volt 1.4 amp 7.8 ohm n-channel power mosfet 10-30-2000 m1 1 2 3 3 dmos l=1u w=1u ron 5 6 4.0 don 6 2 d1 rof 5 7 2.0 dof 2 7 d1 d1crs 2 8 d2 d2crs 1 8 d2 cgs 2 3 500pf rd 4 1 7.8 dcos 3 1 d3 rds 1 3 5.0meg ls 3 30 .5n ld 10 4 1n lg 20 5 1n .model dmos nmos (level=3 vto=3 kp=.3) .model d1 d (is=.5f cjo=10p bv=100 m=.5 vj=.2 tt=1n) .model d2 d (is=.5f cjo=100p bv=1000 m=.6 vj=.6 tt=1n rs=10m) .model d3 d (is=.5f cjo=150p bv=1000 m=.35 vj=.6 tt=400n rs=10m) .ends doc #9200-0239 rev 3 ? 2003 ixys rf
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